Accelerated formation of the boron–oxygen complex in p‐type Czochralski silicon

This Letter reports on the acceleration of the rate of formation of the boron–oxygen defect in p‐type Czochralski silicon with illumination intensities in excess of 2.1 × 10¹⁷ photons/cm²/s. It is observed that increased light intensities greatly enhance the rate of defect formation, without increasing the saturation concentration of the defect. These results suggest a dependence of the defect formation rate upon the total majority carrier concentration. Finally, a method using temperatures up to 475 K and an illumination intensity of 1.68 × 10¹⁹ photons/cm²/s is shown to result in near‐complete defect formation within seconds. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

氘化对KH2PO4晶体微观缺陷影响的正电子湮没研究

采用传统降温法从不同程度氘化(x=0, 0.51, 0.85)的生长溶液中生长氘化KH₂PO₄(KDP) 晶体, 利用正电子湮没技术(正电子寿命谱和多普勒展宽谱)、结合X射线衍射谱(XRD) 结构分析, 对KDP晶体氘化生长的微观缺陷进行了研究, 讨论了氘化程度对晶体内部微观结构特性、缺陷类型和浓度的影响. XRD结果显示晶胞参数a, b值随氘含量的增加而增加, c值无明显变化; 正电子寿命谱结果发现随着氘化浓度的提高, KDP晶体内部中性填隙缺陷以及氧缺陷不断增加, 引起晶体晶格畸变; 氢空位、K空位、杂质替位缺陷不断发生缔合反应形成复合缺陷, 缺陷浓度不断减少; 团簇、微空洞等大尺寸缺陷也在不断发生聚合反应, 缺陷浓度表现为不断减少. 多普勒实验结果表明随着氘化程度的提升, 晶体内部各类缺陷表现为同步变化. 实验结果表明, KDP晶体在低浓度氘化生长(50%以内)下缺陷反应较弱, 而在高浓度氘化(50%以上)下的缺陷反应显著增强.     

Spontaneous Ga incorporation in ZnO nanowires epitaxially grown on GaN substrate

Surface‐diffusion‐induced spontaneous Ga incorporation process is demonstrated in ZnO nanowires grown on GaN substrate. Crucially, contrasting distributions of Ga atoms in axial and radial directions are experimentally observed. Ga atoms uniformly distribute along the ～10 μm long ZnO nanowire and show a rapidly gradient distribution in the radial direction, which is attributed substantially to the difference between surface and volume diffusion. The understanding on the incorporation process can potentially modulate doping and properties in semiconductor nanomaterials.

     

Plastic-strain evolution for cyclic loading based on the equations of the field theory of defects

A relation governing the plastic-strain evolution under applied stresses is obtained within the field theory of defects to analyze the specific features of deformation under sign-varying cyclic loading. The effect of the applied stress amplitude, loading frequency, and cycle skewness on the deformation process under uniaxial loading conditions is studied. Specific features of the plastic-strain evolution in a stable deformation process are considered, and the time to failure of the system in an unstable process is determined. __________ Translated from Prikladnaya Mekhanika i Tekhnicheskaya Fizika, Vol. 47, No. 3, pp. 112–118, May–June, 2006.     

Ultrasonic characterization of point defects induced by cross slip under pure shear

Longitudinal wave velocity is used to characterize the point defects in crystalline solids. High purity Al single crystal was selected for both the finite element analysis and experimental work. Since the jog motions of dislocations caused by intersected slides such as cross slips induce point defects, the total amount of cross slips was calculated instead of calculating directly from the point defects. The effect of crystal orientations on total amount of cross slips under pure shear was also investigated via the finite element method. The result suggest that if the initial shear stress direction is located at the inner side of stereographic triangle, only single slip activities occurred at the beginning of plastic deformation and no effects due to point defects were present. However, as the shear stress direction rotates along the slip direction, point defects are induced by cross slips between primary and secondary slip systems due to work-hardening. This phenomenon was then examined by measuring longitudinal wave velocity changes propagating in Al single crystal subjected to the combination loads of equi-biaxial tension and compression (a pure shear state). Good qualitative agreement between the finite element result and measured data suggest that the longitudinal wave velocity can be used as an index to characterize point defects in crystalline materials.     

Phase field modeling precipitation of β-phase and mechanical properties change in Zr–Nb alloys under neutron irradiation

ABSTRACT

We study microstructure transformation in Zr–Nb system under neutron irradiation and its mechanical properties change under mechanical loads in a form of shear deformation by using phase field methodology. The developed phase field approach takes into account defects dynamics based on reaction rate theory and elastic contribution to study mechanical properties change. A numerical modeling is provided in three stages: sample preparation, irradiation of the prepared sample and mechanical loading of the irradiated sample. A precipitation of β-Niobium particles of the size of several nanometers is discussed. Results of phase field modeling indicate that β-Niobium particles grow slowly during irradiation due to point defects rearrangement. Statistical analysis of dynamics of radiation-induced microstructure transformations is provided. Simulation results of shear deformation of pre-irradiated and post-irradiated alloys are discussed. Maps of local distribution of strain and stress and strain–stress curves are obtained. Results are verified with experimental data.     

Al2O3衬底无催化剂生长GaN纳米线及其光学性能

采用一种绿色的等离子增强化学气相沉积法,以Al2O3为衬底, Ga金属为镓源, N2为氮源,在不采用催化剂的情况下,成功制备获得了结晶质量良好的GaN纳米线.研究表明,生长温度可显著调控GaN纳米线的形貌,当反应温度为950℃时,生长出的GaN微米片为六边形;当反应温度为1000℃时,生长出了长度为10-20μm的超长GaN纳米线.随着反应时间增加, GaN纳米线的长度增加. GaN纳米线内部存在着压应力,应力大小为0.84 GPa.同时,也进一步讨论了GaN纳米线无催化剂生长机制. GaN纳米线光致发光结果显示, GaN纳米线缺陷较少,结晶质量良好,在360 nm处有一个较为尖锐的本征发光峰,可应用于紫外激光器等光电子器件.本研究结果将为新型光电器件低成本绿色制备提供一个可行的技术方案.     

Adsorption Site Regulation to Guide Atomic Design of Ni–Ga Catalysts for Acetylene Semi‐Hydrogenation

Atomic regulation of metal catalysts has emerged as an intriguing yet challenging strategy to boost product selectivity. Here, we report a density functional theory‐guided atomic design strategy for the fabrication of a NiGa intermetallic catalyst with completely isolated Ni sites to optimize acetylene semi‐hydrogenation processes. Such Ni sites show not only preferential acetylene π‐adsorption, but also enhanced ethylene desorption. The characteristics of the Ni sites are confirmed by multiple characterization techniques, including aberration‐corrected high‐resolution scanning transmission electron microscopy and X‐ray absorption spectrometry measurements. The superior performance is also confirmed experimentally against a Ni₅Ga₃ intermetallic catalyst with partially isolated Ni sites and against a Ni catalyst with multi‐atomic ensemble Ni sites. Accordingly, the NiGa intermetallic catalyst with the completely isolated Ni sites shows significantly enhanced selectivity to ethylene and suppressed coke formation.     

紫外熔石英元件高精度低缺陷控形控性制造技术研究进展

传统的紫外熔石英元件加工方法本身会引入各类制造缺陷,需要后期加工来消除前期加工带来的缺陷,限制了熔石英元件的加工质量和加工效率。针对这些问题,课题组提出了采用磁流变、离子束、保形光顺和流体动压抛光等可控柔体加工技术提升熔石英元件的加工效果,并开展了相关研究。主要介绍了课题组在关键技术上取得的重要进展,包括亚纳米精度表面控形制造技术、纳米精度本征表面控性生成方法、熔石英元件高精度低缺陷组合工艺与设备等一系列关键技术。通过探讨关键技术及其发展现状,为未来紫外熔石英元件高精度低缺陷制造技术的发展提供参考。     

Characterisation of atomic-scale defects in ODS ferritic alloys by positron annihilation

The vacancy-type defects and their local chemical environment in different ODS alloys produced in the USA (14YWT), China (K5) and Russia (ODS EP-450) are studied. The Angular Correlation of Annihilation Radiation (ACAR), which is one of the positron annihilation spectroscopy method, was used. It was shown that in all alloys, except 14YWT, the dominant type of positron traps are vacancy-like defects, localised in matrix or associated with dislocations and/or interfaces of the incoherent particles. In the case of 14YWT alloy, which contains Y–Ti–O nanoclusters of a high density, the positrons confine and annihilate at O-vacancy pairs or complexes within nanoclusters. It is testified by enhanced electron density in annihilation sites and neighbourhood of Ti and Y atoms. These results, obtained by the ACAR method, indicate that the vacancies play an essential role in the formation of nanoclusters in ODS 14YWT alloy as it was theoretical predicted by first-principle calculations.